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Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS2, MoSe2, WS2, and WSe2

机译:在体积mos2,mose2,Ws2和Wse2的布里渊区的K点和H点处的直接光学跃迁

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abstract: Modulated reflectance (contactless electroreflectance (CER), photoreflectance (PR), and piezoreflectance (PzR)) has been applied to study direct optical transitions in bulk MoS[subscript 2], MoSe[subscript 2], WS[subscript 2], and WSe[subscript 2]. In order to interpret optical transitions observed in CER, PR, and PzR spectra, the electronic band structure for the four crystals has been calculated from the first principles within the density functional theory for various points of Brillouin zone including K and H points. It is clearly shown that the electronic band structure at H point of Brillouin zone is very symmetric and similar to the electronic band structure at K point, and therefore, direct optical transitions at H point should be expected in modulated reflectance spectra besides the direct optical transitions at the K point of Brillouin zone. This prediction is confirmed by experimental studies of the electronic band structure of MoS[subscript 2], MoSe[subscript 2], WS[subscript 2], and WSe[subscript 2] crystals by CER, PR, and PzR spectroscopy, i.e., techniques which are very sensitive to critical points of Brillouin zone. For the four crystals besides the A transition at K point, an A[subscript H] transition at H point has been observed in CER, PR, and PzR spectra a few tens of meV above the A transition. The spectral difference between A and A[subscript H] transition has been found to be in a very good agreement with theoretical predictions. The second transition at the H point of Brillouin zone (B[subscript H] transition) overlaps spectrally with the B transition at K point because of small energy differences in the valence (conduction) band positions at H and K points. Therefore, an extra resonance which could be related to the B[subscript H] transition is not resolved in modulated reflectance spectra at room temperature for the four crystals.
机译:摘要:调制反射率(非接触电反射率(CER),光反射率(PR)和压电反射率(PzR))已用于研究块状MoS [下标2],MoSe [下标2],WS [下标2]中的直接光学跃迁,和WSe [下标2]。为了解释在CER,PR和PzR光谱中观察到的光学跃迁,根据密度泛函理论中布里渊区各个点(包括K点和H点)的第一个原理,计算了四种晶体的电子能带结构。清楚地表明,布里渊区H点的电子带结构非常对称,并且与K点的电子带结构相似,因此,除了直接的光学跃迁之外,在调制反射光谱中还应期待H点的直接光学跃迁。在布里渊区的K点。通过CER,PR和PzR光谱法对MoS [下标2],MoSe [下标2],WS [下标2]和WS [下标2]和WSe [下标2]晶体的电子能带结构进行实验研究,证实了这一预测。对布里渊区的临界点非常敏感。对于除了在K点的A跃迁以外的四个晶体,在CER,PR和PzR光谱中,在A跃迁之上数十meV处,在H跃迁处观察到了A [下标H]跃迁。已经发现A和A [下标H]跃迁之间的光谱差异与理论预测非常吻合。布里渊区H点的第二个跃迁(B [下标H]跃迁)与K点的B跃迁在光谱上重叠,这是因为H和K点的价(导)带位置的能量差很小。因此,对于四晶体,在室温下的调制反射光谱中没有解决可能与B [下标H]跃迁有关的额外共振。

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